Replacement metal gate structures for effective work function control

ABSTRACT

A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.12/885,592, filed Sep. 20, 2010 the entire content and disclosure ofwhich is incorporated herein by reference.

BACKGROUND

The present disclosure generally relates to semiconductor devices, andparticularly to semiconductor structures having dual work function metalgates and a high-k gate dielectric, and methods of manufacturing thesame.

High gate leakage current of silicon oxide and nitrided silicon dioxideas well as depletion effect of polysilicon gate electrodes limits theperformance of conventional semiconductor oxide based gate electrodes.High performance devices for an equivalent oxide thickness (EOT) lessthan 1 nm require high dielectric constant (high-k) gate dielectrics andmetal gate electrodes to limit the gate leakage current and provide highon-currents. Materials for high-k gate dielectrics include ZrO₂, HfO₂,other dielectric metal oxides, alloys thereof, and their silicatealloys.

In general, dual metal gate complementary metal oxide semiconductor(CMOS) integration schemes employ two gate materials, one having a workfunction near the valence band edge of the semiconductor material in thechannel and the other having a work function near the conduction bandedge of the same semiconductor material. In CMOS devices having asilicon channel, a conductive material having a work function of 4.0 eVis necessary for n-type metal oxide semiconductor field effecttransistors (NMOSFETs, or “NFETs”) and another conductive materialhaving a work function of 5.0 eV is necessary for p-type metal oxidesemiconductor field effect transistors (PMOSFETs, or “PFETs”). Inconventional CMOS devices employing polysilicon gate materials, aheavily p-doped polysilicon gate and a heavily n-doped polysilicon gateare employed to address the needs. In CMOS devices employing high-k gatedielectric materials, two types of gate stacks comprising suitablematerials satisfying the work function requirements are needed for thePFETs and for the NFETS, in which the gate stack for the PFETs providesa flat band voltage closer to the valence band edge of the material ofthe channel of the PFETs, and the gate stack for the NFETs provides aflat band voltage closer to the conduction band edge of the material ofthe channel of the NFETs. In other words, threshold voltages need to beoptimized differently between the PFETs and the NFETs.

Manufacture of dual metal gate CMOS structures is difficult because twotypes of metal gate electrodes are needed to provide different workfunctions. Integration of dual gate CMOS structures with a replacementgate structure is even more difficult because of the difficulty inpatterning different metal layers in replacement gate geometries.

BRIEF SUMMARY

A stack of a barrier metal layer and a first-type work function metallayer having a first-type work function is deposited on a gatedielectric layer within recessed gate cavities after removal ofdisposable gate structures. In one embodiment, the barrier metal layeris deposited directly on the gate dielectric layer. The first-type workfunction metal layer is patterned to be present in regions of a firsttype field effect transistor, which can be p-type or n-type transistors,while removed in regions of a second type field effect transistor. Asecond-type work function metal layer is deposited directly on thebarrier metal layer in the regions of the second type field effecttransistor. In another embodiment, the first-type work function layer isdeposited directly on the gate dielectric layer. The barrier metal layeris patterned to be present in regions of a first type field effecttransistor, while removed in regions of a second type field effecttransistor. A second-type work function metal layer is depositeddirectly on the gate dielectric layer in the regions of the second typefield effect transistor. In both embodiments, a conductive materialfills the gate cavities, and a subsequent planarization process formsdual work function metal gate structures.

According to an aspect of the present disclosure, a semiconductorstructure includes a first field effect transistor and a second fieldeffect transistor that are located on a semiconductor substrateincluding a semiconductor material. The first field effect transistorincludes: a first gate dielectric located over a first portion of thesemiconductor substrate; a first barrier metal portion contacting thefirst gate dielectric; a first-type work function metal portionincluding a first metal having a first work function and contacting thefirst barrier metal portion; and a first second-type work function metalportion including a second metal having a second work function andcontacting the first-type work function metal portion. One of the firstand second work functions is closer to a conduction band of thesemiconductor material than a valence band of the semiconductormaterial, and the other of the first and second work functions is closerto the valence band than to the conduction band. The second field effecttransistor includes: a second gate dielectric located over a secondportion of the semiconductor substrate; a second barrier metal portioncontacting the second gate dielectric; and a second second-type workfunction metal portion including the second metal and contacting thesecond barrier metal portion.

According to another aspect of the present disclosure, anothersemiconductor structure includes a first field effect transistor and asecond field effect transistor that are located on a semiconductorsubstrate including a semiconductor material. The first field effecttransistor includes: a first gate dielectric located over a firstportion of the semiconductor substrate; a first-type work function metalportion including a first metal having a first work function andcontacting the first gate dielectric; a barrier metal portion contactingthe first-type work function metal portion; and a first second-type workfunction metal portion including a second metal having a second workfunction and contacting the barrier metal portion. One of the first andsecond work functions is closer to a conduction band of thesemiconductor material than a valence band of the semiconductormaterial, and the other of the first and second work functions is closerto the valence band than to the conduction band. The second field effecttransistor includes: a second gate dielectric located over a secondportion of the semiconductor substrate; and a second second-type workfunction metal portion including the second metal and contacting thesecond barrier metal portion.

According to yet another aspect of the present disclosure, a method offorming a semiconductor structure including a first field effecttransistor and a second field effect transistor is provided. The methodincludes: recessing disposable gate structures below a planar dielectricsurface to form gate cavities over a semiconductor substrate; forming astack, from bottom to top, of a contiguous gate dielectric layer, abarrier metal layer, and a first-type work function metal layerincluding a first metal having a first work function in the gatecavities and on the planar dielectric surface; patterning the first-typework function metal layer, wherein the first-type work function metallayer is present in a first gate cavity, and the barrier metal layer isexposed in a second gate cavity after the patterning; and forming asecond-type work function metal layer including a second metal having asecond work function on the first-type work function metal portion andthe exposed barrier metal layer. One of the first and second workfunctions is closer to a conduction band of the semiconductor materialthan a valence band of the semiconductor material, and the other of thefirst and second work functions is closer to the valence band than tothe conduction band.

According to still another aspect of the present disclosure, anothermethod of forming a semiconductor structure including a first fieldeffect transistor and a second field effect transistor is provided. Themethod includes: recessing disposable gate structures below a planardielectric surface to form gate cavities over a semiconductor substrate;forming a stack, from bottom to top, of a contiguous gate dielectriclayer, a first-type work function metal layer including a first metalhaving a first work function, and a barrier metal layer in the gatecavities and on the planar dielectric surface; patterning the barriermetal layer and the first-type work function metal layer, wherein thebarrier metal layer and the first-type work function metal layer arepresent in a first gate cavity, and the barrier metal layer and thefirst-type work function metal layer are removed in a second gate cavityduring the patterning; and forming a second-type work function metallayer including a second metal having a second work function on thebarrier metal layer in the first gate cavity and a portion of thecontiguous gate dielectric layer in the second gate cavity. One of thefirst and second work functions is closer to a conduction band of thesemiconductor material than a valence band of the semiconductormaterial, and the other of the first and second work functions is closerto the valence band than to the conduction band.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view of a first exemplarysemiconductor structure after formation of disposable gate structuresand formation of a planar dielectric surface on a planarizationdielectric layer according to a first embodiment of the presentdisclosure.

FIG. 2 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the disposable gate structuresaccording to the first embodiment of the present disclosure.

FIG. 3 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a stack of a contiguous gatedielectric layer, a barrier metal layer, a first-type work functionmetal layer, and a dielectric masking layer according to the firstembodiment of the present disclosure.

FIG. 4 is a vertical cross-sectional view of the first exemplarysemiconductor structure after application of a photoresist andlithographic patterning of the dielectric masking layer according to thefirst embodiment of the present disclosure.

FIG. 5 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the photoresist and patterningof the first-type work function metal layer employing the dielectricmasking layer as an etch mask according to the first embodiment of thepresent disclosure.

FIG. 6 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a second-type work functionmetal layer and a gate conductor layer according to the first embodimentof the present disclosure.

FIG. 7 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of materials above the planardielectric surface to form gate structures according to the firstembodiment of the present disclosure.

FIG. 8 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of contact via structuresaccording to the first embodiment of the present disclosure.

FIG. 9 is a vertical cross-sectional view of a variation of the firstexemplary semiconductor structure according to the first embodiment ofthe present disclosure.

FIG. 10 is a vertical cross-sectional view of a second exemplarysemiconductor structure after formation of a stack of a contiguous gatedielectric layer, a first-type work function metal layer, a barriermetal layer, and a dielectric masking layer according to the secondembodiment of the present disclosure.

FIG. 11 is a vertical cross-sectional view of the second exemplarysemiconductor structure after application of a photoresist andlithographic patterning of the dielectric masking layer and the barriermetal layer according to the second embodiment of the presentdisclosure.

FIG. 12 is a vertical cross-sectional view of the second exemplarysemiconductor structure after removal of the photoresist and patterningof the first-type work function metal layer employing the dielectricmasking layer as an etch mask according to the second embodiment of thepresent disclosure.

FIG. 13 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a second-type work functionmetal layer and a gate conductor layer according to the secondembodiment of the present disclosure.

FIG. 14 is a vertical cross-sectional view of the second exemplarysemiconductor structure after removal of materials above the planardielectric surface to form gate structures according to the secondembodiment of the present disclosure.

FIG. 15 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of contact via structuresaccording to the second embodiment of the present disclosure.

FIG. 16 is a vertical cross-sectional view of a variation of the secondexemplary semiconductor structure according to the second embodiment ofthe present disclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to semiconductorstructures having dual work function metal gates and a high-k gatedielectric, and methods of manufacturing the same, which are nowdescribed in detail with accompanying figures. It is noted that like andcorresponding elements mentioned herein and illustrated in the drawingsare referred to by like reference numerals. It is also noted thatproportions of various elements in the accompanying figures are notdrawn to scale to enable clear illustration of elements having smallerdimensions relative to other elements having larger dimensions.

Referring to FIG. 1, a first exemplary semiconductor structure accordingto a first embodiment of the present disclosure includes a semiconductorsubstrate 8, on which various components of field effect transistors areformed. The semiconductor substrate 8 can be a bulk substrate includinga bulk semiconductor material throughout, or asemiconductor-on-insulator (SOI) substrate (not shown) containing a topsemiconductor layer, a buried insulator layer located under the topsemiconductor layer, and a bottom semiconductor layer located under theburied insulator layer. The semiconductor material of the semiconductorsubstrate 8 may be selected from, but is not limited to, silicon,germanium, silicon-germanium alloy, silicon carbon alloy,silicon-germanium-carbon alloy, gallium arsenide, indium arsenide,indium phosphide, III-V compound semiconductor materials, II-VI compoundsemiconductor materials, organic semiconductor materials, and othercompound semiconductor materials. Typically, the semiconductor materialincludes silicon.

Various portions of the semiconductor material in the semiconductorsubstrate 8 can be doped with electrical dopants of p-type or n-type atdifferent dopant concentration levels. For example, the semiconductorsubstrate 8 may include an underlying semiconductor layer 10, a firstconductivity type well 12B, and a second-conductivity type well 12A. Thefirst conductivity type well 12B is doped with electrical dopants of afirst conductivity type, which can be p-type or n-type. The secondconductivity type well 12A is doped with electrical dopants of a secondconductivity type, which is the opposite type of the first conductivitytype. For example, if the first conductivity type is p-type, the secondconductivity type is n-type, and vice versa.

The dopant concentration of the first conductivity type well 12B and thesecond conductivity type well 12A can be from 1.0×10¹⁴/cm³ to1.0×10¹⁹/cm³, and typically from 1.0×10¹⁶/cm³ to 1.0×10¹⁹/cm³, althoughlesser and greater concentrations can also be employed. The dopantconcentration of the underlying semiconductor layer 10 can be from1.0×10¹⁴/cm³ to 1.0×10¹⁹/cm³, and typically from 1.0×10¹⁵/cm³ to1.0×10¹⁶/cm³, although lesser and greater concentrations can also beemployed.

Shallow trench isolation structures 20 are formed to laterally separateeach of the first conductivity type well 12B and the second conductivitytype well 12A. Typically, each of the first conductivity type well 12Band the second conductivity type well 12A is laterally surrounded by acontiguous portion of the shallow trench isolation structures 20. If thesemiconductor substrate 8 is a semiconductor-on-insulator substrate,bottom surfaces of the first conductivity type well 12B and the secondconductivity type well 12A may contact a buried insulator layer (notshown), which electrically isolates each of the first conductivity typewell 12B and the second conductivity type well 12A from othersemiconductor portions of the semiconductor substrate 8 in conjunctionwith the shallow trench isolation structures 20.

A disposable dielectric layer and a disposable gate material layer aredeposited and lithographically patterned to form disposable gatestructures. For example, the disposable gate stacks may include a firstdisposable gate structure that is a stack of a first disposabledielectric portion 29A and a first disposable gate material portion 27Aand a second disposable gate structure that is a stack of a seconddisposable dielectric portion 29B and a second disposable gate materialportion 27B. The disposable dielectric layer includes a dielectricmaterial such as a semiconductor oxide. The disposable gate materiallayer includes a material that can be subsequently removed selective todielectric material such as a semiconductor material. The firstdisposable gate structure (29A, 27A) is formed over the secondconductivity type well 12A, and the second disposable gate structure(29B, 27B) is formed over the first conductivity type well 12B. Theheight of the first disposable gate structure (29A, 27A) and the seconddisposable gate structure (29B, 27B) can be from 20 nm to 500 nm, andtypically from 40 nm to 250 nm, although lesser and greater heights canalso be employed.

Dopants of the first conductivity type are implanted into portions ofthe second conductivity type well 12A that are not covered by the firstdisposable gate structure (29A, 27A) to form first source and drainextension regions 14A. The first conductivity type well 12B can bemasked by a photoresist (not shown) during the implantation of the firstconductivity type dopants to prevent implantation of the firstconductivity type dopants therein. The dopant concentration in the firstsource and drain extension regions 14A can be from 1.0×10¹⁸/cm³ to1.0×10²¹/cm³, and typically from 1.0×10¹⁹/cm³ to 3.0×10²⁰/cm³, althoughlesser and greater concentrations can also be employed. Similarly,dopants of the second conductivity type are implanted into portions ofthe first conductivity type well 12B that are not covered by the seconddisposable gate structure (29B, 27B) to form second source and drainextension regions 14B. The second conductivity type well 12A can bemasked by a photoresist (not shown) during the implantation of thesecond conductivity type dopants to prevent implantation of the secondconductivity type dopants therein. The dopant concentration in thesecond source and drain extension regions 14B can be from 1.0×10¹⁸/cm³to 1.0×10²¹/cm³, and typically from 1.0×10¹⁹/cm³ to 3.0×10²⁰/cm³,although lesser and greater concentrations can also be employed.

Dielectric gate spacers are formed on sidewalls of each of thedisposable gate structures, for example, by deposition of a conformaldielectric material layer and an anisotropic etch. The dielectric gatespacers include a first dielectric gate spacer 52A formed around thefirst disposable gate structure (29A, 27A) and a second dielectric gatespacer 52B formed around the second disposable gate structure (29B,27B).

Dopants of the first conductivity type are implanted into portions ofthe second conductivity type well 12A that are not covered by the firstdisposable gate structure (29A, 27A) and the first dielectric gatespacer 52A to form first source and drain regions 16A. The firstconductivity type well 12B can be masked by a photoresist (not shown)during the implantation of the first conductivity type dopants toprevent implantation of the first conductivity type dopants therein. Thedopant concentration in the first source and drain regions 16A can befrom 1.0×10¹⁹/cm³ to 1.0×10²¹/cm³, and typically from 1.0×10²⁰/cm³ to5.0×10²⁰/cm³, although lesser and greater concentrations can also beemployed. Similarly, dopants of the second conductivity type areimplanted into portions of the first conductivity type well 12B that arenot covered by the second disposable gate structure (29B, 27B) and thesecond dielectric gate spacer 52B to form second source and drainregions 16B. The second conductivity type well 12A can be masked by aphotoresist (not shown) during the implantation of the secondconductivity type dopants to prevent implantation of the secondconductivity type dopants therein. The dopant concentration in thesecond source and drain regions 16B can be from 1.0×10¹⁹/cm³ to1.0×10²¹/cm³, and typically from 1.0×10²⁰/cm³ to 5.0×10²⁰/cm³, althoughlesser and greater concentrations can also be employed.

In some embodiments, the first source and drain regions 16A and/or thesecond source and drain regions 16B can be formed by replacement of thesemiconductor material in the second conductivity type well 12A and/orthe semiconductor material in the first conductivity type well 12B witha new semiconductor material having a different lattice constant. Inthis case, the new semiconductor material(s) is/are typicallyepitaxially aligned with (a) single crystalline semiconductormaterial(s) of the second conductivity type well 12A and/or thesemiconductor material in the first conductivity type well 12B, andapply/applies a compressive stress or a tensile stress to thesemiconductor material of the second conductivity type well 12A and/orthe semiconductor material in the first conductivity type well 12Bbetween the first source and drain extension regions 14A and/or betweenthe second source and drain extension regions 14B.

First metal semiconductor alloy portions 46A and second metalsemiconductor alloy portions 46B are formed on exposed semiconductormaterial on the top surface of the semiconductor substrate 8, forexample, by deposition of a metal layer (not shown) and an anneal.Unreacted portions of the metal layer are removed selective to reactedportions of the metal layer. The reacted portions of the metal layerconstitute the metal semiconductor alloy portions (46A, 46B), which caninclude a metal silicide portions if the semiconductor material of thefirst and second source and drain regions (16A, 16B) include silicon.

Optionally, a dielectric liner 54 may be deposited over the metalsemiconductor alloy portions 54, the first and second disposable gatestructures (29A, 27A, 29B, 27B), and the first and second dielectricgate spacers (52A, 52B). A first type stress-generating liner 58 and asecond type stress-generating liner 56 can be formed over the firstdisposable gate structure (29A, 27A) and the second disposable gatestructure (29B, 27B), respectively. The first type stress-generatingliner 58 and/or the second type stress-generating liner 56 can beemployed to apply uniaxial or biaxial lateral stress to a first channelregion, which is the portion of the second conductivity type well 12Abetween the first source and drain extension regions 14A, and/or to asecond channel region, which is the portion of the first conductivitytype well 12B between the second source and drain extension regions 14B,respectively. In one embodiment, one of the first type stress-generatingliner 58 and the second type stress-generating liner 56 applies acompressive stress if underlying source and drain regions (i.e., thefirst source and drain regions 16A or the second source and drainregions 16B) are p-doped regions, and the other of the first typestress-generating liner 58 or the second type stress-generating liner 56applies a tensile stress if underlying source and drain regions (i.e.,the second source and drain regions 16B and the first source and drainregions 16A) are n-doped regions. The first type stress-generating liner58 and the second type stress-generating liner 56 can include adielectric material that generates a compressive stress or a tensilestress to underlying structures, and can be silicon nitride layersdeposited by plasma enhanced chemical vapor deposition under variousplasma conditions.

A planarization dielectric layer 60 is deposited over the first typestress-generating liner 58 and/or the second type stress-generatingliner 56, if present, or over the metal semiconductor alloy portions 54,the first and second disposable gate structures (29A, 27A, 29B, 27B),and the first and second dielectric gate spacers (52A, 52B) if (a)stress-generating liner(s) is/are not present. Preferably, theplanarization dielectric layer 60 is a dielectric material that may beeasily planarized. For example, the planarization dielectric layer 60can be a doped silicate glass or an undoped silicate glass (siliconoxide).

The planarization dielectric layer 60, the first type stress-generatingliner 58 and/or the second type stress-generating liner 56 (if present),and the dielectric liner 54 (if present) are planarized above thetopmost surfaces of the first and second disposable gate structures(29A, 27A, 29B, 27B), i.e., above the topmost surfaces of the first andsecond disposable gate material portions (27A, 27B). The planarizationcan be performed, for example, by chemical mechanical planarization(CMP). The planar topmost surface of the planarization dielectric layer60 is herein referred to as a planar dielectric surface 63.

In one embodiment, the first conductivity type is p-type and the secondconductivity type is n-type. The first source and drain extensionregions 14A and the first source and drain regions 16A are p-doped, andthe second conductivity type well 12A is n-doped. The combination of thefirst source and drain extension regions 14A, the first source and drainregions 16A, and the second conductivity type well 12A can be employedto subsequently form a p-type field effect transistor. Correspondingly,the first source and drain extension regions 14A and the first sourceand drain regions 16A are n-doped, and the second conductivity type well12A is p-doped. The combination of the first source and drain extensionregions 14A, the first source and drain regions 16A, and the secondconductivity type well 12A can be employed to subsequently form ann-type field effect transistor. The first type stress-generating liner58 can apply a tensile stress to the first channel, and the second typestress-generating liner 56 can apply a compressive stress to the secondchannel.

In another embodiment, the first conductivity type is n-type and thesecond conductivity type is p-type. The first source and drain extensionregions 14A and the first source and drain regions 16A are n-doped, andthe second conductivity type well 12A is p-doped. The combination of thefirst source and drain extension regions 14A, the first source and drainregions 16A, and the second conductivity type well 12A can be employedto subsequently form an n-type field effect transistor. Correspondingly,the first source and drain extension regions 14A and the first sourceand drain regions 16A are p-doped, and the second conductivity type well12A is n-doped. The combination of the first source and drain extensionregions 14A, the first source and drain regions 16A, and the secondconductivity type well 12A can be employed to subsequently form a p-typefield effect transistor. The first type stress-generating liner 58 canapply a compressive stress to the first channel, and the second typestress-generating liner 56 can apply a tensile stress to the secondchannel.

Referring to FIG. 2, the first disposable gate structure (29A, 27A) andthe second disposable gate structure (29B, 27B) are removed by at leastone etch. The at least one etch can be a recess etch, which can be anisotropic etch or anisotropic etch. The etch employed to remove thefirst and second disposable gate material portions (27A, 27B) ispreferably selective to the dielectric materials of the planarizationdielectric layer 60, the first type stress-generating liner 58 and/orthe second type stress-generating liner 56 (if present), and the firstand second dielectric gate spacers (52A, 52B). Optionally, one or bothof the dielectric portions (29A, 29B) can be left by etch selective tothese layers. The disposable gate structures (29A, 27A, 29B, 27B) arerecessed below the planar dielectric surface 63 and to expose thesemiconductor surfaces above the first channel and the second channel toform gate cavities (25A, 25B) over the semiconductor substrate.

Optionally, a first semiconductor-element-containing dielectric layer31A can be formed on the exposed surface of the second conductivity typewell 12A by conversion of the exposed semiconductor material into adielectric material, and a second semiconductor-element-containingdielectric layer 31B can be formed on the exposed surface of the firstconductivity type well 12B by conversion of the exposed semiconductormaterial into the dielectric material. The formation of thesemiconductor-element-containing dielectric layers (31A, 31B) can beeffected by thermal conversion or plasma treatment. If the semiconductormaterial of the second conductivity type well 12A and the firstconductivity type well 12B includes silicon, thesemiconductor-element-containing dielectric layers (31A, 31B) caninclude silicon oxide or silicon nitride.

Referring to FIG. 3, a contiguous gate dielectric layer 32L, a barriermetal layer 36L, a first-type work function metal layer 34L, and adielectric masking layer 37 are sequentially deposited as a stack in thegate cavities (25A, 25B) and on the planar dielectric surface 63. Thecontiguous gate dielectric layer 32L can be a high dielectric constant(high-k) material layer having a dielectric constant greater than 8.0.The contiguous gate dielectric layer 32L can include a dielectric metaloxide, which is a high-k material containing a metal and oxygen, and isknown in the art as high-k gate dielectric materials. Dielectric metaloxides can be deposited by methods well known in the art including, forexample, chemical vapor deposition (CVD), physical vapor deposition(PVD), molecular beam deposition (MBD), pulsed laser deposition (PLD),liquid source misted chemical deposition (LSMCD), atomic layerdeposition (ALD), etc. Exemplary high-k dielectric material includeHfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y),ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), a silicate thereof, and analloy thereof. Each value of x is independently from 0.5 to 3 and eachvalue of y is independently from 0 to 2. The thickness of the contiguousgate dielectric layer 32L, as measured at horizontal portions, can befrom 0.9 nm to 6 nm, and preferably from 1.0 nm to 3 nm. The high-kmaterial layer 32L may have an effective oxide thickness on the order ofor less than 1 nm.

The barrier metal layer 36L includes a “metal,” which refers to any ofan elemental metal, an alloy of elemental metals, a conductive compoundof an elemental metal and a non-metal element, and alloys and compoundsthereof. The metal of the barrier metal layer 36 is selected to enable asubsequent selective etching of the material of the first-type workfunction metal layer 34L. As such, the metal of the barrier metal layer36L and the metal of the first-type work function metal layer 34L aredifferent materials.

The barrier metal layer 36L can be a layer of a mid band gap metal,semiconductor valence band edge metals, or semiconductor conduction bandedge metals. A semiconductor valence band edge metal refers to a metalhaving a Fermi level near or below the valence band edge of thesemiconductor material of the second conductivity type well 12A and thefirst conductivity type well 12B. A semiconductor conduction band edgemetal refers to a metal having a Fermi level near or above theconduction band edge of the semiconductor material of the secondconductivity type well 12A and the first conductivity type well 12B.Typically, the Fermi level of a metal is considered to be “near” thevalence band edge or the conduction band edge if the Fermi level of themetal is within 0.25 eV of the valence band edge or the conduction bandedge of a semiconductor material. A mid band gap metal refers to a metalhaving a Fermi level that is between, and more than 0.25 eV away from,the valence band edge and the conduction band edge of the semiconductormaterial of the second conductivity type well 12A and the firstconductivity type well 12B.

For example, if the semiconductor material of the second conductivitytype well 12A and the first conductivity type well 12B is silicon, thebarrier metal layer 36L can be a layer of a mid band gap metal such asAg, Mo, Ta, Re, Hg, Fe, Ru, alloys thereof, and conductive compoundsthereof; or semiconductor valence band edge metals such as Pt, Rh, Ir,Ru, Cu, Os, Be, Co, Pd, Te, Cr, Ni, TiN, and alloys thereof; orsemiconductor conduction band edge metals such as Hf, Ti, Zr, Cd, La,Tl, Yb, Al, Ce, Eu, Li, Pb, Tb, Bi, In, Lu, Nb, Sm, V, Zr, Ga, Mg, Gd,Y, and TiAl (i.e., an alloy of Ti and Al), and alloys thereof.Conductive compounds can be a conductive metal oxide, a conductive metalnitride, or a conductive metal oxynitride. In one embodiment, thebarrier metal layer 36L is a layer of TaN.

The barrier metal layer 36L can be formed, for example, by physicalvapor deposition (PVD, i.e., sputtering), chemical vapor deposition, oratomic layer deposition (ALD). The barrier metal layer 36L is thinenough to allow the energy band at the bottom of the barrier metal layer36L to be affected by the composition of the material of the first-typework function metal layer 34L. In order to ensure that the material ofthe first-type work function metal layer 34L causes significant bandbending at the bottom of the barrier metal layer 36L, the thickness ofthe barrier metal layer 36L is typically set at a value from 0.5 nm to 5nm, and more typically, from 1 nm to 3 nm.

The first-type work function metal layer 34L includes a first metal,which has a first work function. The material of the first-type workfunction metal layer 34L is different from the material of the barriermetal layer 36L, and is selected to be a metal that can be etchedselective to the metal of the barrier metal layer 36L. The first metalof the first-type work function metal layer 34L is selected to optimizethe performance of a transistor to be subsequently formed employing thefirst source and drain extension regions 14A, the first source and drainregions 16A, and the second conductivity type well 12A.

In one embodiment, the first conductivity type is p-type and thesemiconductor material of the second conductivity type well 12A includesn-doped silicon, and the first-type work function metal layer 34Lincludes a silicon valence band edge metals such as Pt, Rh, Ir, Ru, Cu,Os, Be, Co, Pd, Te, Cr, Ni, TiN, and alloys thereof. For example, thefirst-type work function metal layer 34L can be a layer of TiN.

In another embodiment, the first conductivity type is n-type and thesemiconductor material of the second conductivity type well 12A includesp-doped silicon, and the first-type work function metal layer 34Lincludes a silicon conduction band edge metals such as Hf, Ti, Zr, Cd,La, Tl, Yb, Al, Ce, Eu, Li, Pb, Tb, Bi, In, Lu, Nb, Sm, V, Zr, Ga, Mg,Gd, Y, and TiAl, and alloys thereof. For example, the first-type workfunction metal layer 34L can be a layer of TiAl.

The first-type work function metal layer 34L can be formed, for example,by physical vapor deposition, chemical vapor deposition, or atomic layerdeposition (ALD). The first-type work function metal layer 34L is thickenough to significantly affect the energy band at the bottom of thebarrier metal layer 36L. In order to ensure that the material of thefirst-type work function metal layer 34L causes significant band bendingat the bottom of the barrier metal layer 36L, the thickness of thefirst-type work function metal layer 34L is typically set at a valuefrom 2 nm to 30 nm, and more typically, from 3 nm to 10 nm, althoughlesser and greater thicknesses can also be employed.

The dielectric masking layer 37 includes a dielectric material such assilicon oxide, silicon nitride, or silicon oxynitride. The dielectricmasking layer 37 can be deposited, for example, by chemical vapordeposition, or atomic layer deposition (ALD). The thickness of thedielectric masking layer can be from 1 nm to 30 nm, and typically from 2nm to 15 nm, although lesser and greater thicknesses can also beemployed.

Referring to FIG. 4, a photoresist 39 is applied over the dielectricmasking layer 37 and lithographic patterned so that the photoresist 39covers the area over the second conductivity type well 12A, while thetop surface of the dielectric masking layer 37 is exposed over the firstconductivity type well 12B. The pattern in the photoresist 39 istransferred into the dielectric masking layer 37 by an etch, so that theexposed portion of the dielectric masking layer 37 is removed fromwithin the second gate cavity 25B and a surrounding area thereabout.

Referring to FIG. 5, the photoresist 39 is removed, for example, byashing or wet chemistries. The dielectric masking layer 37 is employedas an etch mask to remove the exposed portion of the first-type workfunction metal layer 34L from above the first conductivity type well12B. Specifically, the portion of the first-type work function metallayer 34L is removed from within the second gate cavity 25B employingthe remaining portion of the dielectric masking layer 37 as an etch maskduring the patterning of the first-type work function metal layer 34L.After the patterning of the first-type work function metal layer 34L,the first-type work function metal layer 34L is present in the firstgate cavity 25A, and the barrier metal layer 36L is exposed in thesecond gate cavity 25B.

Referring to FIG. 6, the dielectric masking layer 37 is removedselective to the barrier metal layer 36L and the first-type workfunction metal layer 34L. A second-type work function metal layer 38Land a gate conductor layer 40L are deposited on the exposed surfaces ofthe barrier metal layer 36L and the first-type work function metal layer34L. The second-type work function metal layer 38L includes a secondmetal having a second work function, which is different from the firstwork function. The second metal of the second-type work function metallayer 38L is selected to optimize the performance of a transistor to besubsequently formed employing the second source and drain extensionregions 14B, the second source and drain regions 16B, and the firstconductivity type well 12B.

In one embodiment, the second conductivity type is n-type and thesemiconductor material of the first conductivity type well 12B includesp-doped silicon, and the second-type work function metal layer 38Lincludes a silicon conduction band edge metals such as Hf, Ti, Zr, Cd,La, Tl, Yb, Al, Ce, Eu, Li, Pb, Tb, Bi, In, Lu, Nb, Sm, V, Zr, Ga, Mg,Gd, Y, and TiAl, and alloys thereof. For example, the second-type workfunction metal layer 38L can be a layer of TiAl.

In another embodiment, the second conductivity type is p-type and thesemiconductor material of the first conductivity type well 12B includesn-doped silicon, and the second-type work function metal layer 38Lincludes a silicon valence band edge metals such as Pt, Rh, Ir, Ru, Cu,Os, Be, Co, Pd, Te, Cr, Ni, TiN, and alloys thereof. For example, thesecond-type work function metal layer 38L can be a layer of TiN.

The second-type work function metal layer 38L can be formed, forexample, by physical vapor deposition, chemical vapor deposition, oratomic layer deposition (ALD). The second-type work function metal layer38L is thick enough to significantly affect the energy band at thebottom of the portion of the barrier metal layer 36L that contacts thesecond-type work function metal layer 38L, i.e., within the second gatecavity 25B. In order to ensure that the material of the second-type workfunction metal layer 38L causes significant band bending at the bottomof the barrier metal layer 36L, the thickness of the second-type workfunction metal layer 34L is typically set at a value from 2 nm to 100nm, and more typically, from 3 nm to 10 nm, although lesser and greaterthicknesses can also be employed.

In one embodiment, one of the first and second work functions is closerto the conduction band of the semiconductor material of the firstconductivity type well 12B and the second conductivity type well 12Athan the valence band of that semiconductor material, and the other ofthe first and second work functions is closer to the valence band thanto the conduction band of that material. Typically, the work functionthat is closer to the conduction band than to the valence band of thesemiconductor material is employed to enhance the performance of ann-type field effect transistor, and the work function that is closer tothe valence band than to the conduction band of the semiconductormaterial is employed to enhance the performance of a p-type field effecttransistor.

The gate conductor layer 40L is deposited on the second-type workfunction metal layer 38L, for example, by chemical vapor deposition,physical vapor deposition, or a combination thereof. The first andsecond gate cavities (25A, 25B) are completely filled by the gateconductor layer 40L. The gate conductor layer 40L includes a conductivematerial such as a metal or a doped semiconductor material.

Referring to FIG. 7, portions of the gate conductor layer 40L, thesecond-type work function metal layer 38L, the first-type work functionmetal layer 34L, the barrier metal layer 36L, and the portion of thecontiguous gate dielectric layer 32L are removed from above the planardielectric surface 63 of the planarization dielectric layer 63 byemploying a planarization process.

A first field effect transistor is formed in the region of the secondconductivity type well 12A. The first field effect transistor includesthe second conductivity type well 12A, the first source and drainextension regions 14A, the first source and drain regions 16A, a firstmetal semiconductor alloy portions 64A, the optional firstsemiconductor-element-containing dielectric layer 31A, a first gatedielectric 32A which is a remaining portion of the contiguous gatedielectric layer 32L, a first barrier metal portion 36A which is aremaining portion of the barrier metal layer 36L, a first-type workfunction metal portion 34 which is a remaining portion of the first-typework function metal layer 34L, a first second-type work function metalportion 38A which is a remaining portion of the second-type workfunction metal layer 38L, and a first gate conductor portion 40A whichis a remaining portion of the gate conductor layer 40L. The firstsecond-type work function metal portion 38A includes the second metaland contacts the first-type work function metal portion 34 that includesthe first metal.

A second field effect transistor is formed in the region of the firstconductivity type well 12B. The second field effect transistor includesthe first conductivity type well 12B, the second source and drainextension regions 14B, the second source and drain regions 16B, a secondmetal semiconductor alloy portions 64B, the optional secondsemiconductor-element-containing dielectric layer 31B, a second gatedielectric 32B which is a remaining portion of the contiguous gatedielectric layer 32L, a second barrier metal portion 36B which is aremaining portion of the barrier metal layer 36L, a second second-typework function metal portion 38B which is a remaining portion of thesecond-type work function metal layer 38L, and a second gate conductorportion 40B which is a remaining portion of the gate conductor layer40L. The second second-type work function metal portion 38B includes thesecond metal and contacts the second barrier metal portion 36B, whichhas the same thickness as, and includes the same material as, the firstbarrier metal portion 36A.

Each of the first and second gate dielectrics (32A, 32B) includes ahorizontal gate dielectric portion and a vertical gate dielectricportion extending upward from peripheral regions of the horizontal gatedielectric portion. In the first field effect transistor, the firstbarrier metal portion 36A contacts inner sidewalls of the vertical gatedielectric portion of the first gate dielectric 32A. In the second fieldeffect transistor, the second barrier metal portion 36B contacts innersidewalls of the vertical gate dielectric portion of the second gatedielectric 32B.

The first gate conductor portion 40A contacts an upper surface and innersidewalls of the first second-type work function metal portion 38A. Thesecond gate conductor portion 40B contacts an upper surface and innersidewalls of the second second-type work function metal portion 38B. Thefirst and second barrier metal portions (36A, 36B) include the samemetal. The metal of the first and second barrier metal portions (36A,36B) may, or may not, have a work function that is between the firstwork function and the second work function.

Referring to FIG. 8, contact via structures (66A, 66B) can be formed,for example, by formation of contact via cavities by a combination oflithographic patterning and an anisotropic etch followed by depositionof a conductive material and planarization that removes an excessportion of the conductive material from above the planar dielectricsurface 63.

Referring to FIG. 9, a variation of the first exemplary semiconductorstructure can be derived from the first exemplary semiconductorstructure by omitting the formation of the firstsemiconductor-element-containing dielectric layer 31A and the secondsemiconductor-element-containing dielectric layer 31B. In this case, thefirst gate dielectric 32A contacts the second conductivity type well12A, and the second gate dielectric 32B contacts the first conductivitytype well 12B.

Referring to FIG. 10, a second exemplary semiconductor structureaccording to the second embodiment of the present disclosure is derivedfrom the first exemplary semiconductor structure of FIG. 2 by forming astack, from bottom to top, of a contiguous gate dielectric layer 32L, afirst-type work function metal layer 34L including a first metal havinga first work function, a barrier metal layer 36L, and a dielectricmasking layer 37 in the first and second gate cavities (25A, 25B) and onthe planar dielectric surface 63 of the planarization dielectric layer60. The composition can be the same as in the first embodiment for eachof the contiguous gate dielectric layer 32L, the first-type workfunction metal layer 34L, the barrier metal layer 36L, and thedielectric masking layer 37. The thickness can be the same as in thefirst embodiment for each of the contiguous gate dielectric layer 32L,the first-type work function metal layer 34L, and the dielectric maskinglayer 37.

In the second embodiment, the barrier metal layer 36L does not need tobe thin enough to allow the energy band at the bottom of the barriermetal layer 36L to be affected by the composition of another metal layerto be subsequently deposited. Thus, the thickness of the barrier metallayer 36L can be from 1 nm to 30 nm, and more typically, from 3 nm to 15nm, although lesser and greater thicknesses can also be employed. In thesecond embodiment, the material of the dielectric masking layer 37 isselected to enable a subsequent selective etching of the materials ofthe barrier metal layer 36L and the first-type work function metal layer34L relative to the material of the dielectric masking layer 37.

As in the first embodiment, the first metal of the first-type workfunction metal layer 34L is selected to optimize the performance of atransistor to be subsequently formed employing the first source anddrain extension regions 14A, the first source and drain regions 16A, andthe second conductivity type well 12A.

Referring to FIG. 11, a photoresist 39 is applied over the dielectricmasking layer 37 and lithographic patterned so that the photoresist 39covers the area over the second conductivity type well 12A, while thetop surface of the dielectric masking layer 37 is exposed over the firstconductivity type well 12B. The pattern in the photoresist 39 istransferred into the dielectric masking layer 37 and optionally into thebarrier metal layer 36L by at least one etch. The exposed portion of thedielectric masking layer 37 is removed from within the second gatecavity 25B and a surrounding area thereabout. If the pattern in thephotoresist 39 is transferred into the barrier metal layer 36L, theexposed portion of the barrier metal layer 36L is removed from withinthe second gate cavity 25B.

Referring to FIG. 12, the photoresist 39 is removed, for example, byashing of wet chemistries. The dielectric masking layer 37 is employedas an etch mask to remove the exposed portion of the barrier metal layer36L if not previously removed. The remaining portion of the dielectricmasking layer 37 is removed selective to the first-type work functionmetal layer 34L. The portion of the first-type work function metal layer34L is removed from within the second gate cavity 25B employing theremaining portion of the barrier metal layer 36L as an etch mask duringthe patterning of the first-type work function metal layer 34L. Afterthe patterning of the first-type work function metal layer 34L, thebarrier metal layer 36L and the first-type work function metal layer 34Lis present in the first gate cavity 25A, and surfaces of the contiguousgate dielectric layer 32L are exposed within the second gate cavity 25Band regions thereabout.

Referring to FIG. 13, a second-type work function metal layer 38L and agate conductor layer 40L are deposited on the exposed surfaces of thecontiguous gate dielectric layer 32L and the first-type work functionmetal layer 34L. The second-type work function metal layer 38L includesa second metal having a second work function, which is different fromthe first work function. The second metal of the second-type workfunction metal layer 38L is selected to optimize the performance of atransistor to be subsequently formed employing the second source anddrain extension regions 14B, the second source and drain regions 16B,and the first conductivity type well 12B. The second-type work functionmetal layer 38L can have the same composition and thickness as in thefirst embodiment.

As in the first embodiment, one of the first and second work functionscan be closer to the conduction band of the semiconductor material ofthe first conductivity type well 12B and the second conductivity typewell 12A than the valence band of that semiconductor material, and theother of the first and second work functions can be closer to thevalence band than to the conduction band of that material. Typically,the work function that is closer to the conduction band than to thevalence band of the semiconductor material is employed to enhance theperformance of an n-type field effect transistor, and the work functionthat is closer to the valence band than to the conduction band of thesemiconductor material is employed to enhance the performance of ap-type field effect transistor.

In one embodiment, one of the first and second work functions is closerto the conduction band of the semiconductor material of the firstconductivity type well 12B and the second conductivity type well 12Athan the valence band of that semiconductor material, and the other ofthe first and second work functions is closer to the valence band thanto the conduction band of that material. Typically, the work functionthat is closer to the conduction band than to the valence band of thesemiconductor material is employed to enhance the performance of ann-type field effect transistor, and the work function that is closer tothe valence band than to the conduction band of the semiconductormaterial is employed to enhance the performance of a p-type field effecttransistor.

The gate conductor layer 40L is deposited on the second-type workfunction metal layer 38L, for example, by chemical vapor deposition,physical vapor deposition, or a combination thereof. The first andsecond gate cavities (25A, 25B) are completely filled by the gateconductor layer 40L. The gate conductor layer 40L includes a conductivematerial such as a metal or a doped semiconductor material.

Referring to FIG. 14, portions of the gate conductor layer 40L, thesecond-type work function metal layer 38L, the barrier metal layer 36L,the first-type work function metal layer 34L, and the portion of thecontiguous gate dielectric layer 32L are removed from above the planardielectric surface 63 of the planarization dielectric layer 63 byemploying a planarization process.

A first field effect transistor is formed in the region of the secondconductivity type well 12A. The first field effect transistor includesthe second conductivity type well 12A, the first source and drainextension regions 14A, the first source and drain regions 16A, a firstmetal semiconductor alloy portions 46A, the optional firstsemiconductor-element-containing dielectric layer 31A, a first gatedielectric 32A which is a remaining portion of the contiguous gatedielectric layer 32L, a first-type work function metal portion 34 whichis a remaining portion of the first-type work function metal layer 34L,a barrier metal portion 36 which is a remaining portion of the barriermetal layer 36L, a first second-type work function metal portion 38Awhich is a remaining portion of the second-type work function metallayer 38L, and a first gate conductor portion 40A which is a remainingportion of the gate conductor layer 40L. The first second-type workfunction metal portion 38A includes the second metal and contacts thebarrier metal portion 36.

A second field effect transistor is formed in the region of the firstconductivity type well 12B. The second field effect transistor includesthe first conductivity type well 12B, the second source and drainextension regions 14B, the second source and drain regions 16A, a secondmetal semiconductor alloy portions 46B, the optional secondsemiconductor-element-containing dielectric layer 31B, a second gatedielectric 32B which is a remaining portion of the contiguous gatedielectric layer 32L, a second second-type work function metal portion38B which is a remaining portion of the second-type work function metallayer 38L, and a second gate conductor portion 40B which is a remainingportion of the gate conductor layer 40L. The second second-type workfunction metal portion 38B includes the second metal and contacts thesecond gate dielectric 32B, which has the same thickness as, andincludes the same material as, the first gate dielectric 32A.

Each of the first and second gate dielectrics (32A, 32B) includes ahorizontal gate dielectric portion and a vertical gate dielectricportion extending upward from peripheral regions of the horizontal gatedielectric portion. In the first field effect transistor, the first-typework function metal portion 34 contacts inner sidewalls of the verticalgate dielectric portion of the first gate dielectric 32A. In the secondfield effect transistor, the second second-type work function metalportion 38B contacts inner sidewalls of the vertical gate dielectricportion of the second gate dielectric 32B.

The first gate conductor portion 40A contacts an upper surface and innersidewalls of the first second-type work function metal portion 38A. Thesecond gate conductor portion 40B contacts an upper surface and innersidewalls of the second second-type work function metal portion 38B. Thefirst and second second-type work function metal portions (38A, 38B)include the same metal.

Referring to FIG. 15, contact via structures (66A, 66B) can be formed,for example, by formation of contact via cavities by a combination oflithographic patterning and an anisotropic etch followed by depositionof a conductive material and planarization that removes an excessportion of the conductive material from above the planar dielectricsurface 63.

Referring to FIG. 16, a variation of the second exemplary semiconductorstructure can be derived from the second exemplary semiconductorstructure by omitting the formation of the firstsemiconductor-element-containing dielectric layer 31A and the secondsemiconductor-element-containing dielectric layer 31B. In this case, thefirst gate dielectric 32A contacts the second conductivity type well12A, and the second gate dielectric 32B contacts the first conductivitytype well 12B.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Accordingly, the disclosure is intended toencompass all such alternatives, modifications and variations which fallwithin the scope and spirit of the disclosure and the following claims.

What is claimed is:
 1. A semiconductor structure comprising: a firstfield effect transistor and a second field effect transistor that arelocated on a semiconductor substrate comprising a semiconductormaterial, wherein said first field effect transistor comprises: a firstgate dielectric located over a first portion of said semiconductorsubstrate; a first barrier metal portion contacting said first gatedielectric; a first-type work function metal portion comprising a firstmetal having a first work function and contacting said first barriermetal portion; and a first second-type work function metal portioncomprising a second metal having a second work function and contactingsaid first-type work function metal portion, wherein one of said firstand second work functions is closer to a conduction band of saidsemiconductor material than a valence band of said semiconductormaterial, and the other of said first and second work functions iscloser to said valence band than to said conduction band, and whereinsaid second field effect transistor comprises: a second gate dielectriclocated over a second portion of said semiconductor substrate; a secondbarrier metal portion contacting said second gate dielectric; and asecond second-type work function metal portion comprising said secondmetal and contacting said second barrier metal portion.
 2. Thesemiconductor structure of claim 1, wherein each of said first andsecond gate dielectrics includes a horizontal gate dielectric portionand a vertical gate dielectric portion extending upward from peripheralregions of said horizontal gate dielectric portion, wherein one of saidfirst and second barrier metal portions contacts inner sidewalls of saidvertical gate dielectric portion.
 3. The semiconductor structure ofclaim 1, wherein said first field effect transistor further comprises afirst gate conductor portion contacting an upper surface and innersidewalls of said first second-type work function metal portion, andsaid second field effect transistor further comprises a second gateconductor portion contacting an upper surface and inner sidewalls ofsaid second second-type work function metal portion.
 4. Thesemiconductor structure of claim 1, wherein one of said first and secondfield effect transistors is a p-type field effect transistor and theother of said first and second field effect transistors is an n-typefield effect transistor, wherein one of said first-type work functionmetal portion and said second second-type work function metal portion islocated in said p-type field effect transistor and has a work functionsthat is closer to said valence band than said conduction band, and theother of said first-type work function metal portion and said secondsecond-type work function metal portion is located in said n-type fieldeffect transistor and has a work functions that is closer to saidconduction band than said valence band.
 5. The semiconductor structureof claim 1, wherein said first and second gate dielectrics comprise asame dielectric metal oxide having a dielectric constant greater than8.0.
 6. The semiconductor structure of claim 1, wherein the at least oneof the first barrier metal layer and the second barrier metal layercomprises at least one of a mid band gap metal selected from the groupconsisting of Ag, Mo, Ta, Re, Hg, Fe, Ru, alloys thereof, and conductivecompounds thereof.
 7. The semiconductor structure of claim 1, whereinthe first metal having the first work function comprises a siliconvalence band edge metal selected from the group consisting of Pt, Rh,Ir, Ru, Cu, Os, Be, Co, Pd, Te, Cr, Ni, TiN, and alloys thereof.
 8. Thesemiconductor structure of claim 1, wherein the second metal having thesecond work function comprises a silicon conduction band edge metalssuch as Hf, Ti, Zr, Cd, La, Tl, Yb, Al, Ce, Eu, Li, Pb, Tb, Bi, In, Lu,Nb, Sm, V, Zr, Ga, Mg, Gd, Y, and TiAl, and alloys thereof.
 9. Thesemiconductor structure of claim 1, wherein at least one of the firstgate dielectric and the second gate dielectric is a high-k dielectricselected from the group consisting of HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂,SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y),Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y), LaAlO_(x)N_(y),Y₂O_(x)N_(y), a silicate thereof, and an alloy thereof.
 10. Asemiconductor structure comprising a first field effect transistor and asecond field effect transistor that are located on a semiconductorsubstrate comprising a semiconductor material, wherein said first fieldeffect transistor comprises: a first gate dielectric located over afirst portion of said semiconductor substrate; a first-type workfunction metal portion comprising a first metal having a first workfunction and contacting said first gate dielectric; a barrier metalportion contacting said first-type work function metal portion; and afirst second-type work function metal portion comprising a second metalhaving a second work function and contacting said barrier metal portion,wherein one of said first and second work functions is closer to aconduction band of said semiconductor material than a valence band ofsaid semiconductor material, and the other of said first and second workfunctions is closer to said valence band than to said conduction band,and wherein said second field effect transistor comprises: a second gatedielectric located over a second portion of said semiconductorsubstrate; and a second second-type work function metal portioncomprising said second metal and contacting said second barrier metalportion.
 11. The semiconductor structure of claim 10, wherein each ofsaid first and second gate dielectrics includes a horizontal gatedielectric portion and a vertical gate dielectric portion extendingupward from peripheral regions of said horizontal gate dielectricportion, wherein one of said first-type work function metal portion andsecond second-type work function metal portion contacts inner sidewallsof said vertical gate dielectric portion.
 12. The semiconductorstructure of claim 10, wherein said first field effect transistorfurther comprises a first gate conductor portion contacting an uppersurface and inner sidewalls of said first second-type work functionmetal portion, and said second field effect transistor further comprisesa second gate conductor portion contacting an upper surface and innersidewalls of said second second-type work function metal portion. 13.The semiconductor structure of claim 12, wherein said first and secondgate dielectrics comprise a same dielectric metal oxide having adielectric constant greater than 8.0.
 14. The semiconductor structure ofclaim 12, wherein one of said first and second field effect transistorsis a p-type field effect transistor and the other of said first andsecond field effect transistors is an n-type field effect transistor,wherein one of said first-type work function metal portion and saidsecond second-type work function metal portion is located in said p-typefield effect transistor and has a work functions that is closer to saidvalence band than said conduction band, and the other of said first-typework function metal portion and said second second-type work functionmetal portion is located in said n-type field effect transistor and hasa work functions that is closer to said conduction band than saidvalence band.
 15. The semiconductor structure of claim 10, wherein thebarrier metal portion comprises at least one of a mid band gap metalselected from the group consisting of Ag, Mo, Ta, Re, Hg, Fe, Ru, alloysthereof, and conductive compounds thereof.
 16. The semiconductorstructure of claim 10, wherein the first metal having the first workfunction comprises a silicon valence band edge metal selected from thegroup consisting of Pt, Rh, Ir, Ru, Cu, Os, Be, Co, Pd, Te, Cr, Ni, TiN,and alloys thereof.
 17. The semiconductor structure of claim 10, whereinthe second metal having the second work function comprises a siliconconduction band edge metals such as Hf, Ti, Zr, Cd, La, Tl, Yb, Al, Ce,Eu, Li, Pb, Tb, Bi, In, Lu, Nb, Sm, V, Zr, Ga, Mg, Gd, Y, and TiAl, andalloys thereof.
 18. The semiconductor structure of claim 10, wherein atleast one of the first gate dielectric and the second gate dielectric isa high-k dielectric selected from the group consisting of HfO₂, ZrO₂,La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y),La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), a silicate thereof, and an alloy thereof.